发明名称 Method of forming resist pattern utilizing antireflective layer containing rosin or hydrogenated rosin
摘要 An antireflective layer comprises a binder component in the form of a rosin which is soluble in both a low polar organic solvent and an aqueous alkaline solution, and a light absorbing component which is also soluble in both the low polar organic solvent and the aqueous alkaline solution. In photolithography, the antireflective layer exhibits excellent anti-reflective properties in a predetermine UV wavelength region, and, when used for forming resist patterns, the antireflective layer can be applied dissolved in the low polar organic solvent in a manner which has no detrimental effect on the resist, and can be removed along with the resist during the development process using the aqueous alkaline solution.
申请公布号 US5888703(A) 申请公布日期 1999.03.30
申请号 US19960775194 申请日期 1996.12.30
申请人 SONY CORPORATION 发明人 TOMO, YOICHI
分类号 G03F7/004;G03F7/09;G03F7/11;H01L21/027;(IPC1-7):G03F7/11;G03F7/30 主分类号 G03F7/004
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