| 摘要 |
PROBLEM TO BE SOLVED: To increase the yield of array chip, while decreasing the cutting circuit when an array chip is produced by cutting the etching groove of an epitaxial layer of GaAsP, or the like. SOLUTION: A plurality of independent chips are formed on an epitaxial wafer 1 of GaAsP, and an etching groove 4 made in the dicing street between these chips is cut in the vertical direction by means of a dicing blade 7, having a blade width of 50μm or more. The dicing street between the chips is set with a narrow width, so that an array chip of specified dimensions can be obtained with a single cutting by the dicing blade 7.
|
