MANUFACTURE OF MEMORY CELL TRANSISTOR,申请号JP19970243052-传众专利搜索

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发明名称	MANUFACTURE OF MEMORY CELL TRANSISTOR
摘要
申请公布号	JPH1187542(A)	申请公布日期	1999.03.30
申请号	JP19970243052	申请日期	1997.09.08
申请人	SANYO ELECTRIC CO LTD	发明人	NISHIGUCHI AKIRA
分类号	H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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