| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can easily form good electrical connections between electrodes of mutually different layers and wirings or between wirings. SOLUTION: This manufacturing method has an element isolation regions 51 formed on a main plane of a semiconductor substrate 50, forming gate electrodes 53 and source-drain electrodes 56, forming an insulating nitride film 57 on the main plane of the substrate 50, forming a layer insulation film 58 having connection holes H, converting the nitride film 57 at the bottoms of the connection holes H to a conductive nitride film 61 having a coupling energy higher than that of the insulating nitride, and forming a wiring 62 to be connected to the source-drain electrodes 56 through the conductive nitride film 61. |
