| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for evaluating a semiconductor element forming process for quantitatively evaluating the degree of influence of each unit process on the unevenness of electrical characteristics of a semiconductor element formed on a semiconductor substrate by the use of a device simulator. SOLUTION: This method for evaluating a semiconductor element forming process comprises the steps of adjustably aligning impurity profiles of a gate electrode, a channel and an LDD for a MOSFET in a device simulator by using an inverse engineering method (S1 to S3), thereafter conducting a multiple regression analysis on unevennessΔVth of the threshold voltage of the MOSFET on a simulator (S4), and calculating the (S5) degree of influence of unevenness of a gate length for the unevennessΔVth of the voltage of the MOSFET, unevenness of a gate oxide film thickness, and unevenness of a channel dosage.
|
