| 摘要 |
PROBLEM TO BE SOLVED: To consistently protect the surface of a semiconductor wafer device in each process by a method, wherein two layers of a reinforcing layer, which absorbs the uneveness on the surface of the semiconductor wafer device at the time of back grinding, and a protective layer, which prevents an etching liquid from creeping into the surface of the device at the time of a spin etching, are formed for a film for semiconductor wafer device surface protection use. SOLUTION: A film 10 for semiconductor wafer device surface protection use is formed into a two-layered structure, which consists of a reinforcing layer 11 having an adhesive layer and a protective layer 12 having an adhesive layer such as the layer 11. As a base material 11a of the layer 11, a plastic film, such as a polyethylene film and a polyethylene terephthalate film is suitable, and as the suitable example of the adhesive layer 11b, which is applied on the layer 11, an acrylic resin, a silicone resin, natural rubber and the like are mentioned. As a base material 12a of the layer 12, a high-elastic constant film, such as a polyethylene terephthalate film, is suitable for the purpose of preventing the generation of curling of a semiconductor wafer, which is generated following spin etching. Moreover, as the thickness of the base material 12a, a thickness of 50 to 500μm or thereabouts is suitable.
|
