| 摘要 |
PROBLEM TO BE SOLVED: To simplify control of bank specification in a multi-bank semiconductor storage device. SOLUTION: A bank drive signal generation circuit 30 imparts an operation mode specification signalϕA,ϕB, answering to an operation mode instruction signalϕimparted from a command decoder 2, to a bank drive circuit provided for this bank in an activated state when only one bank is activated according to array activation signal ACT#A and ACT#B from the bank drive circuits 5, 6 provided answering to respective banks #A, #B. At this time, a state of a bank address signal is optional.
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