发明名称 |
Method for manufacturing polysilicon with relatively small line width |
摘要 |
A method is provided for manufacturing a polysilicon with a relatively small line width. The method includes steps of: a) forming a first layer of photoresist with a line pattern having a first line interval and a first line width over the polysilicon; b) etching a portion of the polysilicon for forming the polysilicon with a second line interval x and a second line width y respectively equal to the first line interval and the first line width; c) forming a second layer of photoresist with a third line interval and a third line width over the polysilicon; d) etching another portion of the polysilicon for forming the polysilicon with a fourth line interval x', equal to the third line interval, and a fourth line width y'; e) depositing a polysilicon film over the polysilicon with the relatively small line width; and f) etching a portion of the polysilicon film to form sidewalls of the polysilicon with the relatively small line width for adjusting the relatively small line width of the polysilicon.
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申请公布号 |
US5888904(A) |
申请公布日期 |
1999.03.30 |
申请号 |
US19970991083 |
申请日期 |
1997.12.16 |
申请人 |
HOLTEK MICROELECTRONICS INC. |
发明人 |
WU, KUO-CHIEN |
分类号 |
H01L21/027;H01L21/3213;H01L21/84;H01L27/12;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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