SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To constitute a DRAM hybrid logic semiconductor device having satisfactory integrity with a DRAM or logic process, by incorporating a second wiring layer connected to a first wiring layer formed on a second insulating film having a flattened surface on a first insulating layer formed with the first wiring layer connected to a memory cell. SOLUTION: An interlayer insulating film 30 is formed on a silicon substrate 10 formed with a memory cell and a transistor 28. And, a global step is existed on the surface of the film 30 without completely flattening the surface. A wiring layer 32 connected to the transistor 28 or the like via the film 30 is formed on the film 30. An interlayer insulating film 34 substantially flattened on its surface is formed on the film 30 formed with the layer 32. A plug 36 embedded in a via hole opened on the layer 32 is formed on the film 34. A wiring layer 38 connected to the transistor 28 or the like via the plug 36 is formed on the film 34. A hybrid logic semiconductor device having satisfactory integrity with a DRAM and a logic process can be constituted.