| 摘要 |
PROBLEM TO BE SOLVED: To obtain the stable surface of an SiC substrate, without causing a blackening of the SiC substrate at the time of a heat treatment of the silicon carbide substrate by a method, wherein in a heat-treatment process subsequent to an ion implantation into the silicon carbide substrate, the substrate is put in a roughly sealed container to heat-treat the substrate. SOLUTION: An SiC substrate 3, which is subjected to heat treatment, is put in an SiC container 2 and an SiC cover 1 is shut to form a sealed state in the container 2. This container 2 is put on a stage in a heating furnace to perform the heat treatment on the substrate 3. As a heating atmosphere, an argon or vacuum atmosphere is used. The interior or the container 2 is filled with Si vapor, which is evaporated from the inner surfaces of the container 2 and the cover 1. Owing to that, if the area of the substrate 3 is small in comparison with the areas of the inner surfaces of the container 2 and the cover 1, a blackening of the substrate 3 will not be generated. The container 2 is made by a method, wherein SiC materials of a thickness of 5 to 20μm, for example, are made to precipitate into a graphite mold by a CVD method, and components made by such a method so as to remove the mold of the graphite are combined with each other.
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