| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the mobility, the threshold voltage, or the like, due to fluctuation in the length of a lightly doped region by forming a first conductive layer as a gate interconnection layer through a gate insulation film, forming a second conductive layer on the first conductive layer, and then coating the side face of the first and second conductive layers with a third conductive layer. SOLUTION: A semiconductor layer 24 having a channel region 24a composed of polysilicon of a polysilicon thin film transistor 17, regions 24b, c doped lightly with P+ ions, a source region 24d heavily doped lightly with P+ ions, and a drain region 24e is formed on a transparent insulating substrate 23. A first conductive layer 27a of Al is then formed on the semiconductor layer 24 through a gate insulation film 26, a second conductive layer 27b of Ti is formed the conductive layer 27a and the side face of the first and second conductive layers 27a, 27b are coated with a third conductive layer 27c thus forming a gate interconnection layer integrally with a scanning line.</p> |
