| 摘要 |
PROBLEM TO BE SOLVED: To prevent the oxidation of Cu in a high pressure reflow process of Cu and to prevent the deterioration of embedding characteristics due to it, in forming wiring to the contact holes or through-holes of a semiconductor device. SOLUTION: In the process of forming a copper film 5 which covers wiring connecting holes 3a of the inter-layer dielectric of the semiconductor device and forming an Cu oxidation inhibiting film 4 on a Cu film, a high vacuum atmosphere of 1.33*10-<3> Pa or high vacuum is maintained at the time of forming the Cu oxidation inhibiting film 4. Thereafter the copper of the copper film is press fit to the wiring connecting holes 3a at high temperature and high pressure of an inert gas. A metal such as titanium or a silicon nitride film is used as the oxidation inhibiting film. The Cu film is formed by a sputtering method, using the copper of the purity of 99.999 wt.% (5N) or better as a target. The quantity of impure gas in the high pressure inert gas quantity gas is kept at 50 vpm or less. |
