| 发明名称 |
Semiconductor integrated circuit |
| 摘要 |
In a monolithic active matrix circuit that uses offset-gate TFTs in which the gate electrode is offset from the source and drain regions or TFTs whose gate insulating film is formed by vapor deposition, not only an active matrix circuit but also a drive circuit therefor is formed by using P-channel TFTs.
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| 申请公布号 |
US5889291(A) |
申请公布日期 |
1999.03.30 |
| 申请号 |
US19960688829 |
申请日期 |
1996.07.31 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KOYAMA, JUN;KAWASAKI, YUJI |
| 分类号 |
G02F1/1345;G02F1/133;G02F1/136;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/49;H01L29/78;H01L29/786;(IPC1-7):H01L29/04;H01L31/036 |
主分类号 |
G02F1/1345 |
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