| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable nitride semiconductor device having enhanced emission intensity in which short circuit does not occur even after long term use under high temperature high humidity conditions. SOLUTION: The nitride semiconductor device comprises a substrate 11, an n-type layer 12 and a p-type layer 13 formed sequentially on the substrate 11, a p-type electrode 23 provided on the p-type 13, a first recess 301 reaching the n-type layer 12 from the p-type layer 13 side, an n-electrode 14 provided on the n-type layer 12 exposed to the first recess 301, and a second recess 302 reaching the substrate 11 from the p-type layer 13 side. The surface 304 of the substrate exposed to the second recess 302 is located lower than the interface between the n-type layer 12 and the substrate 11 and an insulation film 24 is formed continuously from the p-type electrode 23 and the n-electrode 14 to the second recess 302 except the bonding face of the p-type electrode 23 and the n-electrode 14. |
