| 摘要 |
PROBLEM TO BE SOLVED: To improve yielding or reliability of a LED chip by forming a conductive intermediate layer on a second conductivity type semiconductor layer. SOLUTION: A P-side thin film contact layer 24a is formed entirely on an upper face of a P-type semiconductor layer 22a, while an N-side thin film contact layer 25a is formed entirely on the other side of an N-type semiconductor substrate 23a. Then an intermediate layer 36a is formed entirely on an upper face of the semiconductor P-side thin film contact layer 24a, while an N-side thick film electrode layer 28a is formed entirely on the upper face of the N-side thin film contact layer 25a. Then a surface of the N-side thick film electrode layer 28a is stuck to a glass plate 43 by a double-sided adhesive sheet 42. Then a groove 44 of a substrate 45 is covered to be filled, and an electrically insulating layer 27a is further formed on an intermediate layer 36b. Then a side of a substrate 46, that is the electrically insulating layer 27a, is polished to the middle of the intermediate layer 36b. Then a p-side thick film electrode layer 37a is formed on an intermediate layer 36. Then a substrate 48 is subjected to full dicing along the groove 44 in a thickness direction. |
