发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To prolong the lifetime under high humidity environment by enhancing the moisture resistance of an LED. SOLUTION: A multilayer reflective film 3 is deposited on an n-GaAs substrate 2 and then an n-AlGaInP layer 4, a p-GaInP or p-AlGaInP active layer 5, a p-AlGaInP layer 6, and a p-GaAs surface protective film 7 are formed thereon. Furthermore, an n-side electrode 13 is provided entirely on the lower surface of the n-GaAs substrate 2 and a p-side electrode 10 is formed on the surface protective film 7. A light intake window 11 having diameter of 150 μm is made in the center of the p-side electrode 10. Since the surface protective film 7 contains no Al, it has narrower band gap than the active layer 5 but it is strong against moisture. When such a surface protective film 7 is provided, output of the light decreases but the active layer 5 is protected against moisture and the moisture resistance can be enhanced.
申请公布号 JPH1187769(A) 申请公布日期 1999.03.30
申请号 JP19970256135 申请日期 1997.09.03
申请人 OMRON CORP 发明人 IMAMOTO HIROSHI;KONISHI YASUHIRO;YANAGASE MASASHI
分类号 H01L33/10;H01L33/14;H01L33/30;H01L33/38;H01L33/46;H01S5/00 主分类号 H01L33/10
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