| 摘要 |
PROBLEM TO BE SOLVED: To suppress the effects of the strain of a strained semiconductor light-emitting device, such as in the strained quantum well semiconductor laser, etc., having a complex structure from being spread throughout the laminated semiconductor of the device. SOLUTION: A semiconductor light-emitting device is manufactured such that a laminated semiconductor layer having at least a buffer layer 2, a first clad layer of first conductivity type, an active layer 4, a second clad layer 5 of a second conductivity type, and a cap layer 7 one electrode of which is ohmic-contacted is formed on a compound semiconductor substrate 1, and strain is introduced to the active layer 4. In addition, it is constituted so as to have another strain which compensates the strain introduced to the active layer 4 is introduced to at least one of the buffer layer 2 and the cap layer 7. |
