| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile memory capable of operating stably even when external power source is stopped during normal operation. SOLUTION: This device is provided with a memory cell array including plural memory cells constituted with one switching transistor and one ferroelectric substance capacitor, and comprises a data protection circuit 200 which generates an internal chip activation signal synchronized with a chip activation signal for setting/resetting a latch circuits 300, 400 of a memory device, but when a power source is turned off during normal reading/writing operation of a memory device and a power source is made lower than the prescribed reference voltage, an internal chip activation signal is kept in an activation state by this circuit for the minimum time required for reading/ writing operation of a memory device corresponding to a chip activation signal, a detecting signal, a sense amplification activation signal, and an internal chip activation signal to protect data of an ferroelectric substance capacitor. |
