| 摘要 |
PROBLEM TO BE SOLVED: To form an insulating film having a high capacity value, by forming a metal nitride thin film of titanium nitride or the like in a nitride plasma processing using ammonia or the like, in a plasma processing having a shower electrode using inert gas made of at least high purity titanium or the like in the case of conducting a chemical vapor deposition. SOLUTION: A titanium nitride film 3A of a plate electrode is formed on a tantalum oxide film 11A by using a plasma chemical vapor deposition unit having a shower electrode of high purity titanium metal. Ammonia gas is introduced, a high frequency power source voltage is applied to generate a plasma to form a titanium nitride film. The ammonia gas is decomposed by generating the plasma, radical NH<+> group is generated, the high purity titanium metal of the shower electrode is sputtered by radical NH<-> group, high purity titanium is generated in the plasma, and reacted with the ammonia gas to form a thin film titanium nitride film. An insulating film for obtaining a high capacity value can be formed by using the tantalum oxide film. |
