发明名称 TWO-STAGED MECHANICAL AND CHEMICAL POLISHING METHOD AND SYSTEM FOR SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a mechanical and chemical polishing method in which the end point of polishing can be detected easily, while minimizing pattern shift at the time of transferring a photomask. SOLUTION: A wafer carrier 13 holds a fixed wafer 14, while pressing the wafer against a polishing table 12 applied with a polishing pad 11, and then polishing is performed by turning both a polishing cable 12 and the wafer carrier 13. A slurry having specified chemical properties is provided to the contact face between the wafer carrier 13 and the polishing pad 11. Polishing is divided into two stages, i.e., a first stage where a specified difference of rotational speed is set between the polishing cable 12 and the wafer carrier 13, in order to facilitate the detection at the end point and a second stage, where both rotational speeds are synchronized in order to minimize alignment shift.
申请公布号 JPH1187286(A) 申请公布日期 1999.03.30
申请号 JP19970240829 申请日期 1997.09.05
申请人 LSI LOGIC CORP 发明人 MIZUNO HIROSHI;KINOSHITA OSAMU;MUROHASHI TETSUSHIYO;UENO AKIHISA;SAKUMA ETSUFUMI;COSTAS ANBERIADIS
分类号 B24B37/013;B24B49/16;H01L21/304;H01L21/321 主分类号 B24B37/013
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