| 摘要 |
PROBLEM TO BE SOLVED: To obtain the semiconductor integrated circuit device, which has a main storage section and an auxiliary storage section that is assigned in accordance with plural access requests, by providing plural registers so that data inputting and outputting patterns are independently set against plural storage cells that are individually selected by address signals or internal control signals. SOLUTION: A semiconductor storage device 100 has a SRAM column control circuit 122 in which changes in SRAM column control modes are made in terms of a SRAM cell group unit. This function enables a lap time, a burst length and latency are to be set for every SRAM cell group unit. If these are beforehand set, the data inputting and outputting patterns are automatically determined in the device 100 when respective SRAM cell groups are selected. If the device 100 receives plural access requests, an assignment and a specification in the SRAM cell group units are made for every access request. |
