| 摘要 |
A method of forming a silicon layer having a roughened outer surface includes, a) providing a substantially amorphous silicon layer over a substrate, the amorphous silicon layer having an outer surface; b) providing a seeding layer over the amorphous silicon layer outer surface; and c) annealing the amorphous silicon layer and seeding layer under temperature and pressure conditions effective to transform said amorphous layer into a silicon layer having a roughened outer surface. The amorphous silicon layer is preferably provided by providing a first silicon source gas (i.e., silane) within a chemical vapor deposition reactor under first reactive temperature and pressure conditions effective to deposit a substantially amorphous first silicon layer on the substrate. After the amorphous silicon layer deposition, a second silicon source gas (i.e., silane) is provided within the chemical vapor deposition reactor under second reactive temperature and pressure conditions effective to deposit a seeding second layer of polysilicon on the amorphous first silicon layer, the second reactive conditions also being effective to maintain the first silicon layer substantially amorphous during the second silicon layer deposition. Then, the first and second silicon layers are annealed under temperature and pressure conditions effective to transform said amorphous first layer into a silicon layer having a roughened outer surface.
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