| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device in which generation of breakdown voltage failure is suppressed by preventing a bubble formation of a liquid-like or gel-like insulation resin across parts of different potential. SOLUTION: The semiconductor device comprises a case 22 provided with a heat dissipating plate 23 on the bottom, an insulating wiring board 28 formed by applying thin metal plates 26, 27 to the upper and lower surfaces of an insulating basic material 25 bonded onto the plate 23 in the case 22, and a semiconductor element 31 mounted on the element mounting part 30 of the patterned thin metal plate 26 on the upper surface side wherein the case 22 is filled with a liquid-like or gel-like insulation resin in order to seal the charged part and the side end faces 25a, 27a of the thin metal plate 27 on the lower surface side and the insulating basic material 25 are substantially coplanar. According to the structure, a bubble is not formed at the outer circumferential part of the insulating wiring board 28 and the element mounting part 30 is not connected with a part of different potential, e.g. the plate 23, through a bubble.</p> |
