发明名称 |
Nonvolatile semiconductor memory device reduced in occupy area of memory cell |
摘要 |
A nonvolatile semiconductor memory cell includes four ferroelectric capacitors and six N channel MOS transistors. When data is to be written or read to or from a certain ferroelectric capacitor, corresponding two word lines are activated.
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申请公布号 |
US5889695(A) |
申请公布日期 |
1999.03.30 |
申请号 |
US19980045045 |
申请日期 |
1998.03.20 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KAWAGOE, TOMOYA |
分类号 |
G11C14/00;G11C8/16;G11C11/22;(IPC1-7):G11C11/22 |
主分类号 |
G11C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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