Group III nitride compound semiconductor laser diodes

摘要

A laser diode using Group III nitride compound semiconductor consists of In0.2Ga0.8N/GaN SQW active layer 5, a pair of GaN guide layers 41 and 62, sandwiching the active layer with wider forbidden band than the active layer, and a pair of Al0.08Ga0.92N cladding layer 4 and 71, sandwiching a pair of the guide layers, and the LD confines carriers and light separately. Al0.15Ga0.75N stopper layers 41 and 62 with wider forbidden band than the guide layers are formed in some portion of each of the guide layers 41 and 62 in parallel to the active layer. As a result, carriers are confined in the active layer and the laser output of the LD is improved.