INSULATED GATE POWER SEMICONDUCTOR DEVICE HAVING A SEMI-INSULATING SEMICONDUCTOR SUBSTRATE

摘要

An insulated gate power semiconductor switching device (11) such as a lateral DMOSFET or a lateral IGBT disposed on a semi-insulating substrate (12). In particular, the substrate may consist of semi-insulating silicon carbide, eg. vanadium-doped SiC. Accordingly, high voltage lateral field-effect can be manufactured using readily available silicon carbide wafers having epilayers of about 10-15 micrometers.