| 摘要 |
<p>A method and apparatus for preheating a coil used to generate a plasma field in a processing chamber in a semiconductor fabrication system. The coil is preheated in the chamber prior to sputter depositing material onto a substrate and workpiece. The coil is preheated to a predetermined temperature, which is preferably equal to or greater than the equilibrium temperature attained by the coil during sputter deposition processes. Preheating may be effected with a preheating current having a frequency lower than the minimum frequency required to ignite a plasma, or when the processing chamber contains an atmosphere which prevents formation of a plasma. The coil may preheated for a predetermined time period.</p> |
