| 摘要 |
<p>A method of effectively washing and drying semiconductor substrates having conspicuously rugged and complex surface shapes, and method of producing semiconductor devices with high quality and high yield by using the above method. In washing the substrate having fine grooves of a high aspect ratio such as trench holes formed in the surface, the vapor of a washing solution is fed into the washing chamber, and a saturation vapor pressure or the temperature of the atmoshpere is controlled so that the vapor is condensed on the substrate as a pre-step of washing by the washing solution enabling the washing solution to easily infiltrate into the grooves. Due to the condensation, the washing solution is easily supplied into fine grooves in the semiconductor substrate.</p> |
