Metal to semiconductor transistor forming semiconductor component for free wheeling diode

摘要

The component (1) has a transition between a metal (2) as a first electrode, and a semiconductor (3) of a conductive type with a drift region (4). Several additional zones (8) of a second conductive type extend from the surface (6) of the semiconductor into the drift region. The number of foreign atoms in the additional zones is essentially equal to the number of foreign atoms in the intermediate zones (9) around the additional zones. The foreign atoms do not exceed a number corresponding to a break charge of the semiconductor. Preferably the additional zones extend through the whole drift region into the semiconductor. The intermediate zones between the additional zones preferably have the same lateral expansion as the additional zones which is between 1 and 10 micrometers.