Process for producing heavily doped silicon

摘要

An element X whose ionic radius is larger than Si and an element Y whose ionic radius is smaller than Si are added to an Si crystal growing atmosphere at an atomic ratio of X:Y=1:(1+ alpha ) or X:Y=(1+ alpha ):1 with the proviso of alpha being a value of 1-5. When Si is double-doped with the elements X and Y, number of carriers is increased up to 10<20>-10<22>/cm<3>. The double-doping may be adaptable to any of a pull method, an epitaxy method or a selective diffusion method. The double-doping remarkably increases number of carriers, so as to produce metallic Si which can be useful itself as a wiring material due to its low resistivity. <IMAGE>