Halbleiteranordnung mit Kompressionsverbindung und Verfahren zu ihrer Herstellung

摘要

A compression bonded type semiconductor element (25) having a ring-shaped gate terminal (27) in the form of an annular metal disk projecting through the side of an insulating cylinder (21). The ring-shaped gate terminal includes an inner circumferential planar portion which is disposed so as to be slidable on an annular ring gate electrode (26). The annular ring gate electrode is in contact with a gate electrode (9a) formed on a semiconductor substrate (8), and the ring gate electrode is pressed against the gate electrode via the ring-shaped gate terminal by an elastic body (28).