| 摘要 |
<p>PURPOSE:To easily form a device surface in a dome shape to improve light take-out efficiency by raising an Al composition ratio of a clad layer continuously toward a surface and etching by using etching solution whose etching speed depends on the Al composition ratio, for example sulfuric acid. CONSTITUTION:A clad layer 12 of N-type In0.5(Ga1-xAlx)0.5P, an active layer 13 of In0.5(Ga1-yAly)0.5P and a clad layer of P-type In0.5(Ga1-zAlz)0.5P are sequentially grown on an N-type GaAs substrate 11 by means of CVD or the like. x, y, z are such that x>y and z>y, and an Al composition ratio is gradually increased from a side of the layer 13 toward a surface on the layer 14. Then a P-type Ga1-pAlpAs intermediate band gap layer 15, a P-type GaAs contact layer 16 and a P-side electrode 17 comprising Au-Zn are laminated at the center of the surface of the layer 14 while an N-side electrode 18 of Au-Ge is provided on the bottom. Then the electrode 17 side is enclosed by a mask 19 to be etched by sulfuric acid to make the layer 14 dome-shaped.</p> |
