Imager and fabrication thereof

摘要

A solid state radiation imager comprises: a photosensor array disposed on a substrate, the array comprising individually-addressable pixels. Each of the pixels comprises a photosensor having a body comprising photosensitive material disposed on an electrically conductive contact pad comprising a first conductive material. There is a thin film transistor (TFT) having a source-drain metal layer comprising the first conductive material, the source-drain metal layer being electrically coupled to and contiguous with the photosensor contact pad. The source-drain metal layer further is electrically coupled to an address line, the TFT being disposed so as to selectively couple the photosensor to the address line. A monolithic common passivation layer is disposed over the TFT and the photosensor, the passivation layer being disposed adjacent an outer surface of the TFT and at least portions of an outer surface of the photosensor island. A common electrode layer is disposed over the common passivation layer, the common electrode being coupled to the photosensor at an upper surface of the photosensor body.