发明名称 |
Method of planarizing an inter-layer dielectric layer |
摘要 |
A method of planarizing an inter-layer dielectric layer includes using a high density plasma chemical vapor deposition method to deposit an undoped dielectric, which increases the polishing efficiency in a subsequent chemical-mechanical polishing operation, and eliminates the need for a high temperature densifying treatment for planarization. A chemical-mechanical polishing operation is used to planarize the inter-layer dielectric.
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申请公布号 |
US5885894(A) |
申请公布日期 |
1999.03.23 |
申请号 |
US19970882303 |
申请日期 |
1997.06.25 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
WU, JIUNH-YUAN;LUR, WATER;SUN, SHIH-WEI |
分类号 |
C23C16/40;H01L21/3105;H01L21/316;(IPC1-7):C23C16/40 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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