发明名称 Method of planarizing an inter-layer dielectric layer
摘要 A method of planarizing an inter-layer dielectric layer includes using a high density plasma chemical vapor deposition method to deposit an undoped dielectric, which increases the polishing efficiency in a subsequent chemical-mechanical polishing operation, and eliminates the need for a high temperature densifying treatment for planarization. A chemical-mechanical polishing operation is used to planarize the inter-layer dielectric.
申请公布号 US5885894(A) 申请公布日期 1999.03.23
申请号 US19970882303 申请日期 1997.06.25
申请人 UNITED MICROELECTRONICS CORPORATION 发明人 WU, JIUNH-YUAN;LUR, WATER;SUN, SHIH-WEI
分类号 C23C16/40;H01L21/3105;H01L21/316;(IPC1-7):C23C16/40 主分类号 C23C16/40
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