发明名称 |
Method for making a bipolar transistor for the protection of an integrated circuit against electrostatic discharges |
摘要 |
In a method for the making of a lateral bipolar transistor, the formation of a field oxide layer on the surface of the substrate, between the collector and the emitter of the protection transistor, is avoided. The lateral bipolar transistors made by the disclosed method are advantageously used to protect MOS type integrated circuits against electrical discharges.
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申请公布号 |
US5886386(A) |
申请公布日期 |
1999.03.23 |
申请号 |
US19950379337 |
申请日期 |
1995.01.27 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.A. |
发明人 |
TAILLIET, FRANCOIS |
分类号 |
H01L29/73;H01L21/331;H01L21/822;H01L27/02;H01L27/04;H01L29/732;(IPC1-7):H01L23/62 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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