发明名称 |
Dielectric material having a low dielectric loss factor for high-frequency use |
摘要 |
A dielectric material having a low dielectric loss factor for high-frequency use, which comprises a sintered product of silicon nitride chiefly composed of silicon nitride and containing at least oxygen as an impurity component or oxygen as an impurity component and a compound of an element of the Group 3a of periodic table, wherein said sintered product contains aluminum in an amount which is not larger than 2% by weight reckoned as an oxide thereof having relative densities of not smaller than 97% and has a dielectric loss factor at 10 GHz ofnot larger than 5x10-4. The dielectric material has excellent mechanical properties such as large strength and excellent chemical stability, features small dielectric loss factor in high-frequency regions, and is suited for use as a material for high-frequency oscillators, antennas, filters and electronic circuit boards. In particular, those dielectric materials are suited for use as window materials for introducing high frequencies in a high-frequency plasma-generating CVD apparatus, a microwave wave output unit and an oscillator.
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申请公布号 |
US5885916(A) |
申请公布日期 |
1999.03.23 |
申请号 |
US19970931499 |
申请日期 |
1997.09.16 |
申请人 |
KYOCERA CORPORATION |
发明人 |
TAJIMA, KENICHI;UCHIMURA, HIDEKI;TANAKA, KOICHI;KOHSAKA, SHOJI;MARUYAMA, HIROSHI |
分类号 |
C04B35/584;C04B35/593;C04B35/622;C04B41/50;C04B41/87;C23C16/511;H01B3/12;H01J23/40;H01P1/08;(IPC1-7):C04B35/584;B32B18/00 |
主分类号 |
C04B35/584 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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