Thin film type monolithic semiconductor device

摘要

A monolithic type active matrix semiconductor device comprises a substrate having an insulating surface, a first plurality of thin film transistors formed on the substrate, each having a first channel region comprising an amorphous silicon semiconductor film, and a second plurality of thin film transistors, each having a second channel region comprising a crystalline semiconductor film. The crystalline semiconductor film of the second plurality of thin film transistors has a substantially single crystalline structure (mono-domain structure) and is doped with a recombination center neutralizer at a concentration of 1x1016 to 1x1020 atoms/cm3. The crystalline semiconductor film of the second plurality of thin film transistors contains a catalyst element which is capable of promoting crystallization of silicon.