| 摘要 |
A photovoltaic cell having a charge transport layer comprising a hole conductor material is disclosed and claimed. The photovoltaic cell comprising a light absorbing layer having a semiconductor material with a bassed gap of at least 3.0 Ev, the surface of the semiconductor having a roughness of >20, optionally a sensitizer layer, a charge transport layer comprising one or more spiro compounds of the formula (I) as a hole conductor material <IMAGE> (I) where PSI is C, Si, Ge or Sn, and K1 and K2, independently of one another, are conjugated systems, and a counter electrode.
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