发明名称 |
LOW-THERMAL EXPANSION CERAMICS, THEIR PRODUCTION AND PART FOR PRODUCING SEMICONDUCTOR |
摘要 |
PROBLEM TO BE SOLVED: To produce low-thermal expansion ceramics having a low thermal expansion and a high rigidity and to provide a method for producing the ceramics. SOLUTION: The low-thermal expansion ceramics are obtained baking a compact prepared by compounding 30-90 wt.% cordierite powder with 10-70 wt.% one selected from silicon nitride, silicon carbide and silicon oxynitride or a compact obtained by adding 0.1-10 wt.% yttria or a rare earth oxide and/or a lithium compound thereto in a vacuum or an inert gas atmosphere at 1,200-1,500 deg.C temperature. The ceramics have <=1×10<-6> / deg.C thermal expansion coefficient at 10-40 deg.C and >=150 GPa Young's modulus. The low-thermal expansion ceramics are applied to a part for producing semiconductors such as a stage for an exposure device to thereby enhance the accuracy in forming a highly fine circuit and raise the quality and mass productivity. |
申请公布号 |
JPH1179830(A) |
申请公布日期 |
1999.03.23 |
申请号 |
JP19970234635 |
申请日期 |
1997.08.29 |
申请人 |
KYOCERA CORP |
发明人 |
SATO MASAHIRO;SECHI HIROHISA |
分类号 |
C04B35/195;H01L21/68;H01L21/683 |
主分类号 |
C04B35/195 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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