| 发明名称 |
Method and apparatus for depositing deep UV photoresist films |
| 摘要 |
An improved method and apparatus for forming a plasma-polymerized methylsilane (PPMS) photo-sensitive resist material includes the steps of pressurizing the chamber to between about 1 to about 2 Torr, heating the substrate to between about 50 DEG C. and about 200 DEG C., and plasma-polymerizing the precursor methylsilane gas to deposit a stable film having high-photosensitivity at high deposition rates.
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| 申请公布号 |
US5885751(A) |
申请公布日期 |
1999.03.23 |
| 申请号 |
US19960745565 |
申请日期 |
1996.11.08 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WEIDMAN, TIMOTHY;SUGIARTO, DIAN |
| 分类号 |
G03F7/38;B05D7/24;C23C16/30;C23C16/509;G03F7/075;G03F7/16;H01L21/02;H01L21/027;H01L21/31;(IPC1-7):G03C5/00 |
主分类号 |
G03F7/38 |
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