| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for efficiently producing high-grade silicon carbide sintered compact, having high density and electroconductivity as well as high heat conductivity and useful in fields such as semiconductor industry, electronic information machine industry or the like. SOLUTION: This method for producing a silicon carbide sintered compact comprises a step for sintering a mixture of silicon carbide powder with a nitrogen source and a non-metallic sintering auxiliary at 2,000-2,400 deg.C or comprises a step for producing silicon carbide powder containing nitrogen by baking a solid material, obtained by homogeneously mixing a silicon source containing one or more kinds of liquid silicon compounds with a carbon source containing one or more kinds of liquid organic compounds and a nitrogen source and a polymerizing or crosslinking catalyst, under a non-oxidizing atmosphere and a step sintering a mixture of silicon carbide powder containing nitrogen with a non-metallic sintering auxiliary at 2,000 to 2,400 deg.C and the resultant sintered compact has >=2.9 g/cm<3> density and <=1 Ω.cm volume resistivity and contains >=150 ppm nitrogen. It is preferable that the nitrogen source is a compound producing nitrogen by heating and the non-metallic sintering auxiliary is a resorcin type phenol. |
