| 发明名称 |
Ultrasonic bonding method and ultrasonic bonding apparatus |
| 摘要 |
In a case of ultrasonic bonding of a bonding wire to a metal pad provided on a semiconductor substrate, the vibration amplitude of a tip end of the bonding tool is set to be smaller than the film thickness of the metal pad, and the vibration frequency of the bonding tool is set to be higher than 70 kHz. According physical damage, such as cracks produced in a portion beneath the metal pad, can be prevented.
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| 申请公布号 |
US5884835(A) |
申请公布日期 |
1999.03.23 |
| 申请号 |
US19960686538 |
申请日期 |
1996.07.26 |
| 申请人 |
HITACHI, LTD. |
发明人 |
KAJIWARA, RYOICHI;TAKAHASHI, TOSHIYUKI;TAKAHASHI, KAZUYA;KOIZUMI, MASAHIRO;WATANABE, HIROSHI;AKIYAMA, YUKIHARU |
| 分类号 |
H01L21/607;B23K20/00;H01L21/60;(IPC1-7):H01L21/607 |
主分类号 |
H01L21/607 |
| 代理机构 |
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