发明名称 Substrate and heat sink for a semiconductor and method of manufacturing the same
摘要 A substrate serving as a heat sink for a semiconductor efficiently radiates heat from a semiconductor element mounted thereon. The substrate consists of a composite alloy metal which consists of a sintered body of a metal powder having a high melting point such as W and Mo impregnated with a filling metal such as Cu and Ag, wherein the sintered body of a metal powder having a high melting point has a grain size composition of a combination of a plurality of powder groups having statistically different average grain sizes from group to group, and the powder of each group is dispersed uniformly.
申请公布号 US5886269(A) 申请公布日期 1999.03.23
申请号 US19960605542 申请日期 1996.02.14
申请人 NIPPON TUNGSTEN CO., LTD. 发明人 KAI, YASUNAO;MISHIMA, AKIRA;GOTOH, SHINJI;YAMASAKI, CHIAKI
分类号 B22F1/00;B22F7/06;H01L23/373;(IPC1-7):B22F3/26;B22F5/00 主分类号 B22F1/00
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