发明名称 |
Substrate and heat sink for a semiconductor and method of manufacturing the same |
摘要 |
A substrate serving as a heat sink for a semiconductor efficiently radiates heat from a semiconductor element mounted thereon. The substrate consists of a composite alloy metal which consists of a sintered body of a metal powder having a high melting point such as W and Mo impregnated with a filling metal such as Cu and Ag, wherein the sintered body of a metal powder having a high melting point has a grain size composition of a combination of a plurality of powder groups having statistically different average grain sizes from group to group, and the powder of each group is dispersed uniformly.
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申请公布号 |
US5886269(A) |
申请公布日期 |
1999.03.23 |
申请号 |
US19960605542 |
申请日期 |
1996.02.14 |
申请人 |
NIPPON TUNGSTEN CO., LTD. |
发明人 |
KAI, YASUNAO;MISHIMA, AKIRA;GOTOH, SHINJI;YAMASAKI, CHIAKI |
分类号 |
B22F1/00;B22F7/06;H01L23/373;(IPC1-7):B22F3/26;B22F5/00 |
主分类号 |
B22F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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