发明名称 |
Silicon dioxide etch process which protects metal |
摘要 |
The present invention is directed to a novel etching process for a semiconductor material which inhibits corrosion of metal comprised of pretreating the material, preferably with a surfactant, and then exposing the material to a mixture comprising salt, a buffered oxide etch, and optionally a surfactant.
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申请公布号 |
US5885477(A) |
申请公布日期 |
1999.03.23 |
申请号 |
US19970782531 |
申请日期 |
1997.01.10 |
申请人 |
MICRON DISPLAY TECHNOLOGY, INC. |
发明人 |
RASMUSSEN, ROBERT T.;CHADHA, SURJIT S.;CATHEY, DAVID A. |
分类号 |
H01L21/311;H01L21/3213;(IPC1-7):C09K13/04;C09K13/08;C09K13/06 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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