发明名称 Gas injection slit nozzle for a plasma process reactor
摘要 A gas injection system for injecting gases into a plasma reactor having a vacuum chamber with a sidewall, a pedestal for holding a semiconductor wafer to be processed, and a RF power applicator for applying RF power into the chamber. The gas injection system includes at least one gas supply containing gas, a gas distribution apparatus which has at least one slotted aperture facing the interior of the chamber, and one or more gas feed lines connecting the gas supply or supplies to the gas distribution apparatus. A preferred embodiment of a radial gas distribution apparatus in accordance with the present invention is disposed in the chamber sidewall and includes plural gas distribution nozzles each with a slotted aperture facing an interior of the chamber. Gas feed lines are employed to respectively connect each gas distribution nozzle to separate ones of the gas supplies.
申请公布号 US5885358(A) 申请公布日期 1999.03.23
申请号 US19960682803 申请日期 1996.07.09
申请人 APPLIED MATERIALS, INC. 发明人 MAYDAN, DAN;MAK, STEVE S. Y.;OLGADO, DONALD;YIN, GERALD ZHEYAO;DRISCOLL, TIMOTHY D.;PAPANU, JAMES S.;TEPMAN, AVI
分类号 C23C16/44;C23C16/455;C23C16/50;H01J37/32;H01L21/02;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):C23C16/00 主分类号 C23C16/44
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