| 摘要 |
PROBLEM TO BE SOLVED: To produce a high-density and high-purity silicon carbide structure having a smooth spherical surface using a silicon carbide of good quality suitable for use in a part or the like for an apparatus for producing semiconductors and to provide a method for producing the silicon carbide structure having the smooth spherical surface. SOLUTION: This silicon carbide structure is obtained by sintering a mixture of a silicon carbide powder with a nonmetallic sintering assistant, inserting the resultant sintered compact into a mold, made of graphite or the like and having a convex surface and a concave surface capable of mutually fitting and forming a spherical void and heat-treating the sintered compact. The density of the resultant sintered compact is preferably >=2.9 g/cm<3> and the curvature of the convex surface and the concave surface of the mold is preferably R>=300. The radius (r) of a cut piece of the sintered compact is preferably (r)<=500 mm and the thickness (t) thereof is preferably (t)<=0.002 R. The heat treatment is preferably carried out at 1,700 to 2,400 deg.C temperature under 0-100 g/cm<3> surface pressure in a nonoxidizing atmosphere. |
