METHOD AND DEVICE FOR DEEP ANISOTROPIC ETCHING OF SILICON PLATES

摘要

FIELD: microelectronics. SUBSTANCE: in manufacturing semiconductor structures for functional microelectronics, integrated-circuit gas sensors with diaphragms as thin as 1-5 mcm, or diaphragms for X-ray photomasks, alkaline etchant is foamed prior to etching and foam produced in the process is used to treat underside of silicon plate using device that has etchant feeding system in the form of hollow tube carrying sprayer on one end; plate is fixed through rubber gasket to horizontal base. EFFECT: provision for eliminating hydrodynamic pressure of liquid on plate when silicon layer under thin diaphragm is fully removed. 2 cl, 2 dwg