| 摘要 |
A method of manufacturing a semiconductor device comprising the steps of heating a substrate at a temperature not less than 200 DEG C., for example 800 DEG C., for a sufficient period; cooling the substrate down to room temperature; coating a chemically amplified resist film on the surface of the substrate; exposing a patterning region of the resist film; developing the resist film to form a resist pattern; and etching the surface of the substrate by a certain thickness, employing the resist pattern as a mask. In forming fine resist pattern using chemically amplified resist, resolution can be improved. |
