METHOD FOR MANUFACTURING CMOS TRANSISTOR,申请号KR19950061309-传众专利搜索

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发明名称	METHOD FOR MANUFACTURING CMOS TRANSISTOR
摘要
申请公布号	KR0180310(B1)	申请公布日期	1999.03.20
申请号	KR19950061309	申请日期	1995.12.28
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	YU, JI-HYUNG;LIM, KWANG-HYUN
分类号	H01L29/78;H01L21/336;H01L21/8238;H01L27/092;(IPC1-7):H01L29/78	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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