| 摘要 |
A photo mask capable of reducing the time taken to carry out a process margin test and a method for performing a process margin test using the photo mask. The method includes the steps of preparing a wafer, coating a photoresist film over the wafer, performing a light exposure and development process for the photoresist film using a photo mask over which a plurality of unit patterns each consisting of three different process margin patterns are arranged, thereby forming a photoresist film pattern, and comparing an image of the photoresist film pattern with data about the process margin patterns of the photo mask stored in a CAD, thereby performing a process margin test. |
